N-Channel PowerTrench짰 MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

30V N沟道PowerTrench® MOSFET

此N沟道MOSFET使用同步或传统的开关PWM控制器，专为提高DC/DC转换器的整体效率并最大限度降低其开关节点振铃噪声而设计。 已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 •VGS = 10 V，ID = 13 A时，rDS(on) = 8 mΩ（最大值）\n•VGS = 4.5 V，ID = 10 A时，最大rDS(on) = 14 mΩ\n•先进的封装和硅技术完美融合，实现了低rDS(on)和高效率\n•下一代先进体二极管技术，专为软恢复设计\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

BAW Duplexer WCDMA Band II

文件：122 Kbytes Page：11 Pages

N-Channel Power Trench짰 MOSFET 30 V, 13.3 A, 8.5 m

文件：261.81 Kbytes Page：7 Pages

N-Channel Power Trench짰 MOSFET

文件：215.91 Kbytes Page：7 Pages