N-Channel PowerTrench짰 MOSFET 80 V, 42 A, 3.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switch

N 沟道，PowerTrench® MOSFET，80V，122A，3.9mΩ

该N沟道MOSFET专为使用同步或传统开关PWM控制器来改进总体效率和在最大程度上减少DC/DC转换器的开关结点振铃而设计。已经针对低栅极电荷、低rDS(on)、快速开关速度和软体二极管反向恢复性能进行了优化。 •VGS = 10V，ID = 19A时，最大rDS(on) = 3.9mΩ\n•最大rDS(on) = 5.5 mΩ （VGS = 8 V, ID = 15.5 A）\n•先进的封装技术和硅技术相结合，实现了低rDS(on)和高效率\n•下一代增强型体二极管技术，专为软恢复设计\n•MSL1耐用封装设计\n•100%经过UIL测试\n•符合RoHS标准;

N 沟道，双 CoolTM 56 PowerTrench® MOSFET，80V，110A，3.1mΩ

此 N 沟道 MOSFET 采用飞兆先进的 Power Trench® 工艺生产。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •Dual Cool™ 顶侧冷却 PQFN 封装\n•最大 rDS(on) = 3.1 mΩ（VGS = 10 V、ID = 24 A）\n•最大 rDS(on) = 4.0 mΩ（VGS = 8 V、ID = 21 A）\n•高性能技术可实现极低的 rDS(on)\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM Power Trench짰 MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

Spacial CRN plain door w/o mount.plate. H800xW600xD300 IP66 IK10 RAL7035..

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Spacial CRN plain door with mount.plate. H800xW600xD300 IP66 IK10 RAL7035..

文件：100.3 Kbytes Page：2 Pages