DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N 沟道双 CoolTM 56 屏蔽门极 PowerTrench® MOSFET 150V，40A，17mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，该工艺融入了栅极屏蔽技术。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on) 的同时通过极低的结至环境热阻保持卓越的开关性能。 •栅极屏蔽 MOSFET 技术\n•Dual Cool™顶侧冷却PQFN封装\n•最大值rDS(on) = 17 mΩ（在VGS = 10 V, ID = 9.3 A时）\n•最大值rDS(on) = 25 mΩ（在VGS = 6 V, ID = 7.8 A时）\n•通态电阻 rDS(on)极低的高性能技术\n•100%经过UIL测试\n•符合 RoHS 标准;

N-Channel Power Trench짰 MOSFET 150 V, 49 A, 18 m廓

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MP Meter Pak, main lugs, six ringed sockets, no bypass, 4 jaws, OH, UG, 800 A bus, 200 A, 240 VAC single phase 3W

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Spacial CRN plain door w/o mount.plate. H800xW600xD200 IP66 IK10 RAL7035..

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Spacial CRN plain door with mount.plate. H800xW600xD200 IP66 IK10 RAL7035..

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