General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

■ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A

■ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A

■ Advanced Package and Silicon combination for low rDS(on) and high efficiency

■ Next generation enhanced body diode technology, engineered for soft recovery.

■ MSL1 robust package design

■ 100 UIL tested

■ RoHS Compliant

Applications

■ IMVP Vcore Switching for Notebook

■ VRM Vcore Switching for Desktop and Server

■ OringFET / Load Switch

■ DC-DC Conversion