General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A

Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A

Advanced Package and Silicon design for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance withminimum EMI in sync buck converter applications

MSL1 robust package design

100 UIL tested

RoHS Compliant

Applications

IMVP Vcore Switching for Notebook

VRM Vcore Switching for Desktop and Server

OringFET / Load Switch

DC-DC Conversion