General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).

Features

■ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A

■ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A

■ Advanced Package and Silicon combination for low rDS(on) and high efficiency

■ MSL1 robust package design

■ 100 UIL tested

■ RoHS Compliant

Applications

■ OringFET

■ Synchronous rectifier