N-ChannelDualCoolTMPowerTrench짰MOSFET100V,60A,7.5m廓

DualCool™packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformanceflexibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece

DUALCOOL??PACKAGEPOWERTRENCH짰MOSFETs

DualCool™packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformanceflexibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainSourceVoltage-:VDSS=100V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·PrimaryDC-DCMOSFET ·SecondarySynchronousRectifier ·LoadSwitch

类型：N沟道漏源电压(Vdss)：100V连续漏极电流(Id)：12.4A功率(Pd)：2.5W导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,13AN沟道，PowerTrenchMOSFET，100V，60A，8mΩ此N沟道MOSFET是使用先进的PowerTrench工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的

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N-ChannelPowerTrench짰MOSFET100V,49A,8m?

文件：250.52 Kbytes Page：7 Pages

N-ChannelPowerTrench짰MOSFET

文件：294.01 Kbytes Page：7 Pages

N-ChannelPowerTrench짰MOSFET100V,60A,8m廓

文件：310.9 Kbytes Page：7 Pages