N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

N 沟道，双 CoolTM 56 PowerTrench® MOSFET，100V，60A，7.5mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，该工艺融入了栅极屏蔽技术。先进的硅技术和 Dual Cool™ 封装技术完美融合，可在提供最小 rDS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。 •栅极屏蔽 MOSFET 技术\n•Dual Cool™顶侧冷却PQFN封装\n•VGS = 10 V，ID = 14.5 A时，Max rDS(on) = 7.5 mΩ\n•VGS = 6 V，ID = 11.5 A时，最大rDS(on) = 12mΩ\n•通态电阻 rDS(on)极低的高性能技术\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages

HIGH FREQUENCY CERAMIC CAPACITORS

文件：240.39 Kbytes Page：6 Pages