General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

„Max rDS(on)= 7.5 mΩat VGS= 10 V, ID= 13 A

„Max rDS(on)= 13 mΩat VGS= 4.5 V, ID= 10 A

„Advanced Package and Silicon combination for low rDS(on) and high efficiency

„Next generation enhanced body diode technology, engineered for soft recovery.

„MSL1 robust package design

„100 UIL tested

„RoHS Compliant

Applications

„IMVP Vcore Switching for Notebook

„VRM Vcore Switching for Desktop and Server

„OringFET / Load Switch

„DC-DC Conversion