General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

■ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A

■ Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A

■ Extended VGSS range (-25 V) for battery applications

■ High performance trench technology for extremely low rDS(on)

■ High power and current handling capability

■ HBM ESD protection level >7 kV typical (Note 4)

■ 100 UIL tested

■ Termination is Lead-free and RoHS Compliant

Applications

■ High side in DC-DC Buck Converters

■ Notebook battery power management

■ Load switch in Notebook