General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

■ Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A

■ Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A

■ Advanced Package and Silicon combination for low rDS(on) and high efficiency

■ Next generation enhanced body diode technology, engineered for soft recovery

■ MSL1 robust package design

■ 100 UIL tested

■ RoHS Compliant

Applications

■ OringFET / Load Switching

■ DC-DC Conversion