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MRF90价格

参考价格：￥42.4764

型号：MRF904 品牌：Microsemi 备注：这里有MRF90多少钱，2025年最近7天走势，今日出价，今日竞价，MRF90批发/采购报价，MRF90行情走势销售排行榜，MRF90报价。

型号	功能描述	生产厂家企业	LOGO
MRF9002NR2	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9002R2	RF Power Field Effect Transistor Array The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common	Motorola 摩托罗拉	Motorola
MRF9002RS	RF POWER FIELD EFFECT TRANSISTOR ARRAY The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common	Motorola 摩托罗拉	Motorola
MRF901	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF901is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.5 GHz. FEATURES: • Low Noise Figure • High Gain • Common Emitter	ASI	ASI
MRF9011	The Rf Line NPN Silicon High-Frequency Transistor The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise	Motorola 摩托罗拉	Motorola
MRF9011L	The Rf Line NPN Silicon High-Frequency Transistor The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise	Motorola 摩托罗拉	Motorola
MRF9011LT1	NPN Silicon High-Frequency Transistor The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise	Motorola 摩托罗拉	Motorola
MRF9030	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them	Motorola 摩托罗拉	Motorola
MRF9030	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-	Motorola 摩托罗拉	Motorola
MRF9030D	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-	Motorola 摩托罗拉	Motorola
MRF9030LR1	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-	Motorola 摩托罗拉	Motorola
MRF9030LSR1	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-	Motorola 摩托罗拉	Motorola
MRF9030LSR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applic	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030MBR1	The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030MBR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030MBR1	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for	Motorola 摩托罗拉	Motorola
MRF9030MR1	The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030MR1	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for	Motorola 摩托罗拉	Motorola
MRF9030MR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030NBR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030NR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030R1	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them	Motorola 摩托罗拉	Motorola
MRF9030SR1	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them	Motorola 摩托罗拉	Motorola
MRF904	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low	Microsemi 美高森美	Microsemi
MRF904	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF904 is Designed for General Purpose Amplifier Applications. FEATURES: • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA	ASI	ASI
MRF904	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Lo	ADPOW	ADPOW
MRF9045	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour	Motorola 摩托罗拉	Motorola
MRF9045LR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9045LSR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9045M	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour	Motorola 摩托罗拉	Motorola
MRF9045MBR1	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour	Motorola 摩托罗拉	Motorola
MRF9045MR1	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour	Motorola 摩托罗拉	Motorola
MRF9045MR1	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour	Motorola 摩托罗拉	Motorola
MRF9045NR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF905	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF905 is Designed for General Purpose Oscillator Applications. FEATURES: • VCC = 20 V • Omnigold™ Metalization System • Collector Connected to Case	ASI	ASI
MRF905	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF905 is Designed for General Purpose Oscillator Applications. FEATURES: • VCC = 20 V • Omnigold™ Metalization System • Collector Connected to Case	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF9060	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9060LR1	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060LSR1	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applicati	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060LSR1	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060LSR1_08	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060MBR1	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9060MR1	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9060NBR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060NR1	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9060R1	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9060S	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9060SR1	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, com	Motorola 摩托罗拉	Motorola
MRF9080	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st	Motorola 摩托罗拉	Motorola
MRF9080LR3	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs) RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment. • Typical Per	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9080LSR3	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st	Motorola 摩托罗拉	Motorola
MRF9080LSR3	RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs) RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common− source amplifier applications in 26 volt base station equipment. • Typical Per	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9080R3	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st	Motorola 摩托罗拉	Motorola
MRF9080SR3	RF POWER FIELD EFFECT TRANSISTORS The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base st	Motorola 摩托罗拉	Motorola
MRF9002R2	1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET	ETC 知名厂家	ETC
MRF9002RS	RF POWER FIELD EFFECT TRANSISTOR ARRAY	ETC 知名厂家	ETC
MRF901	NPN SILICON RF TRANSISTOR	ETC 知名厂家	ETC
MRF9030	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：356.76 Kbytes Page：10 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF9030_08	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：356.76 Kbytes Page：10 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

MRF90产品属性

类型
描述
型号
MRF90
功能描述
射频MOSFET电源晶体管 FR PWR FET ARRAY PFP-16N
RoHS
否
制造商
Freescale Semiconductor
配置
Single
频率
1800 MHz to 2000 MHz
增益
27 dB
输出功率
100 W
封装/箱体
NI-780-4
封装
Tray

MRF90供应商更多...

更新时间：2025-12-27 15:54:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	MRF901	MOT	10+	十字架高频	40	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市创新迹电子有限公司	MRF901	MOT	22+	十字架高频	20000	公司只做原装品质保障	询价
洪芯国际半导体（深圳）有限公司	MRF9011LT1	Motorola	25+	原厂原封装	86720	代理授权原装正品价格最实惠本公司承诺假一赔百	询价
深圳市明嘉莱科技有限公司	MRF901	MOTOROLA/摩托罗拉	24+	SMD	990000	明嘉莱只做原装正品现货	询价
深圳市宇集芯电子有限公司	MRF9011LT1	MOT	24+	N/A	90000	一级代理商进口原装现货、假一罚十价格合理	询价
深圳市百诺芯科技有限公司	MRF9002R2	MOTOROLA/摩托罗拉	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市宇创芯科技有限公司	MRF9011LT1G	ON/安森美	24+	SOT-23	9600	原装现货,优势供应,支持实单!	询价
海芯未来半导体电子（深圳）有限公司	MRF9011LT1G	ON	25+	SOT143	24397		询价
中天科工半导体（深圳）有限公司	MRF9011LT1G	200K库存ON	20+	SOT143	49000	原装优势主营型号-可开原型号增税票	询价
深圳深宇韬电子科技有限公司	MRF9011LT1G	ON	2023+	SOT143	8800	正品渠道现货终端可提供BOM表配单。	询价

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