The RF Sub–Micron MOSFET Line

RF Power Field Effect Transistor Array

N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

• Typical Performance at 960 MHz, 26 Volts

Output Power — 2 Watts Per Transistor

Power Gain — 18 dB

Efficiency — 50

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• Available in Tape and Reel. R2 Suffix = 1,500 Units

per 16 mm, 13 inch Reel.