The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 20 dB

Efficiency — 41 (Two Tones)

IMD — –31 dBc

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Moisture Sensitivity Level 3

• Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.

• TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

• TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.