RF Power Field Effect Transistor Array

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact.

• Typical Performance at 960 MHz, 26 Volts

Output Power — 2 Watts Per Transistor

Power Gain — 18 dB

Efficiency — 50

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW

Output Power

Features

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.