RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen cies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicat

封装/外壳：TO-272-2 包装：卷带（TR） 描述：FET RF 65V 945MHZ TO272-2 分立半导体产品 晶体管 - FET，MOSFET - 射频