The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors

N- Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.

• Typical Two- Tone Performance at 945 MHz, 26 Volts Output Power ó 30 Watts PEP

Power Gain - 19 dB

Efficiency - 41.5

IMD - -32.5 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.