RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF904 is Designed for General Purpose Amplifier Applications. FEATURES: • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Lo

封装/外壳：TO-206AF，TO-72-4 金属罐 包装：卷带（TR） 描述：RF TRANS NPN 15V 4GHZ TO72 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON RF TRANSISTOR

RF/Microwave Si BJT Power Devices & Pallets

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in

945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

Compact, Portable Military Managed Gigabit Ethernet Switch

FEATURES Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial applications, including: • UAVs • Land autonomous vehicles (UGVs) • Robots • Mobile equipment fielded in harsh environments Modern plat

INA219 High Side DC Current Sensor Breakout - 26V ±3.2A Max

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M12?륚 Die Cast Passive I/O Box

文件：169.61 Kbytes Page：3 Pages

NYLON TUBE SPACERS

文件：202.86 Kbytes Page：1 Pages

NYLON TUBE SPACERS

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