RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF904 is Designed for General Purpose Amplifier Applications. FEATURES: • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Lo

封装/外壳：TO-206AF，TO-72-4 金属罐 包装：卷带（TR） 描述：RF TRANS NPN 15V 4GHZ TO72 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are design

M12?륚 Die Cast Passive I/O Box

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NYLON TUBE SPACERS

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NYLON TUBE SPACERS

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Flexible, low cost and high performance

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