RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Low

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF904 is Designed for General Purpose Amplifier Applications. FEATURES: • NF = 1.5 dB (Typ) 450 MHz • Gmax = 16 dB (Typ) 450 MHz • fT = 4.0 GHz (Typ) @ IC = 15 mA

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general-purpose amplifiers. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz • Lo

NPN SILICON RF TRANSISTOR

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：TO-206AF，TO-72-4 金属罐 包装：卷带（TR） 描述：RF TRANS NPN 15V 4GHZ TO72 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–sour

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes Page：11 Pages

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.