RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

• Typical Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 19 dB

Efficiency — 41 (Two Tones)

IMD — -31 dBc

• Integrated ESD Protection

• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,

45 Watts CW Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount.

• 200C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.