位置：首页 > IC中文资料第5828页 > MRF9060
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF9060 | RFPowerFieldEffectTransistorsN−ChannelEnhancement−ModeLateralMOSFETs RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicati | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  |   |
MRF9060 | 945MHz,60W,26VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 |  | |
RFPowerFieldEffectTransistorsN−ChannelEnhancement−ModeLateralMOSFETs RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicati | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorsN−ChannelEnhancement−ModeLateralMOSFETs RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicati | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplicationsin | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET RFPowerFieldEffectTransistor N-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplicationsin | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
TheRFSub-micronMOSFETLineRFPOWERFIELDEFFECTTRANSISTORSN-channelEnhancement-modeLateralMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 | | | |
TheRFSub-micronMOSFETLineRFPOWERFIELDEFFECTTRANSISTORSN-channelEnhancement-modeLateralMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateral MOSFETsDesignedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicat | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateral MOSFETsDesignedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifierapplicat | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
945MHz,60W,26VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 | | | |
945MHz,60W,26VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 | | | |
945MHz,60W,26VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,com | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：364.72 Kbytes Page：11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：364.72 Kbytes Page：11 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
封装/外壳：NI-360S 包装：散装 描述：FET RF 65V 945MHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：455.06 Kbytes Page：12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：455.06 Kbytes Page：12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
SHIELDEDADJUSTABLERFCOILS [J.W.MILLER] | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
INSULATEDPCSPACERS/SUPPORTS 文件：100.21 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
SnapRivets 文件：152.09 Kbytes Page：2 Pages | Heyco Heyco |  | | |
Nytye®PushRivets 文件：100.54 Kbytes Page：1 Pages | Heyco Heyco | | | |
NylonPCBSupports-RivetMount 文件：82.18 Kbytes Page：1 Pages | Heyco Heyco | | |
MRF9060产品属性
- 类型
描述
- 型号
MRF9060
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
原厂原包封装 |
20000 |
全新原装假一赔十 |
|||
Freesca |
2020+ |
NI-360 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Freescale(飞思卡尔) |
23+ |
标准封装 |
6913 |
我们只是原厂的搬运工 |
|||
FREESCA |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
FREESCALE |
08+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FREESCALE |
06+ |
SMD |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA |
23+ |
MODL |
20000 |
原厂原装正品现货 |
|||
FREESCALE |
1948+ |
SMD |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
FREESCALE |
22+ |
NA |
18000 |
原装现货原盒原包.假一罚十 |
|||
freescale/Freescaleiscreatinga |
21+ |
TO-270AA |
929 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
MRF9060芯片相关品牌
MRF9060规格书下载地址
MRF9060参数引脚图相关
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MRGF16
- MRG5903
- MRG5902
- MRG5801
- MRG5800
- MRG2130
- MRG1791
- MRG1781
- MRFC572
- MRF962
- MRF957
- MRF951
- MRF947
- MRF9210
- MRF9180
- MRF914
- MRF9120
- MRF9100
- MRF9085
- MRF9080R3
- MRF9080LSR3
- MRF9080LR5
- MRF9080LR3_08
- MRF9080LR3
- MRF9080
- MRF9060SR1
- MRF9060S
- MRF9060R1
- MRF9060NR1_09
- MRF9060NR1
- MRF9060NBR1
- MRF9060MR1
- MRF9060MBR1
- MRF9060LSR5
- MRF9060LSR1_08
- MRF9060LSR1
- MRF9060LR5
- MRF9060LR1_08
- MRF9060LR1
- MRF905
- MRF904SNR1
- MRF9045S
- MRF9045NR1-CUT TAPE
- MRF9045NR1
- MRF9045NBR1
- MRF9045MR1
- MRF9045MBR1
- MRF9045M
- MRF9045LSR5
- MRF9045LSR1
- MRF9045LR5
- MRF9045LR1_08
- MRF9045LR1
- MRF9045GNR1
- MRF9045GMR1
- MRF9045
- MRF904
- MRF9030SR1
- MRF9030R1
- MRF9030
- MRF9011
- MRF901
- MRF89XA
- MRF899
- MRF898
- MRF897R
- MRF897
- MRF894
- MRF892
- MRF891S
- MRF891
- MRF890
- MRF859S
- MRF859
- MRF858S
- MRF858
MRF9060数据表相关新闻
MRF8P9300HSR6
MRF8P9300HSR6
2023-12-15MRS25000C2872FCT00
优势渠道
2023-11-17MRS25000C1001FRP00
MRS25000C1001FRP00
2021-7-6MRFE6VP6300HR3 全新原装现货
MRFE6VP6300HR3，全新原装现货0755-82732291当天发货或门市自取.
2020-12-4MRF6V3090NBR1射频金属氧化物半导体场效应(RF MOSFET)晶体管
MRF6V3090NBR1射频金属氧化物半导体场效应(RFMOSFET)晶体管
2020-11-24MRF6V3090NR5 射频金属氧化物半导体场效应(RF MOSFET)晶体管
MRF6V3090NR5射频金属氧化物半导体场效应(RFMOSFET)晶体管
2020-11-24
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
