RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Two-Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

Efficiency — 40

IMD — -31 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.