RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applic

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：356.76 Kbytes Page：10 Pages

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：356.76 Kbytes Page：10 Pages

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors

文件：536.35 Kbytes Page：16 Pages

RF Power Field Effect Transistors

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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RF Power Field Effect Transistors

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Radio Interface and Twin Synthesiser

ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone, circuits to demodulate the frequency modulated signal to audio, and a

Radio Interface and Twin Synthesiser

ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone, circuits to demodulate the frequency modulated signal to audio, and a

Low-Cost, Ultra-Small, Single/Dual/Quad Single-Supply Comparators

General Description The MAX9030/MAX9031/MAX9032/MAX9034 single/ dual/quad comparators are optimized for single-supply applications from +2.5V to +5.5V but can also be operated from dual supplies. These comparators have a 188ns propagation delay and consume 35µA of supply current per comparator

Low-Cost, Ultra-Small, Single/Dual/Quad Single-Supply Comparators

General Description The MAX9030/MAX9031/MAX9032/MAX9034 single/ dual/quad comparators are optimized for single-supply applications from +2.5V to +5.5V but can also be operated from dual supplies. These comparators have a 188ns propagation delay and consume 35µA of supply current per comparator

SMARTarget??I/O Accelerator

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