位置：首页 > IC中文资料第6503页 > MRF9030
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF9030 | RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethem | MotorolaMotorola, Inc 摩托罗拉 |  |   |
MRF9030 | TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge- | MotorolaMotorola, Inc 摩托罗拉 | | |
MRF9030 | RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：356.76 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 |  | |
TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge- | MotorolaMotorola, Inc 摩托罗拉 | | | |
TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge- | MotorolaMotorola, Inc 摩托罗拉 | | | |
TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge- | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakeitidealforlarge-signal,common-sourceamplifierapplic | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealfor | MotorolaMotorola, Inc 摩托罗拉 | | | |
TheRFSub-MicronMOSFETLineRFPOWERFIELDEFFECTTRANSISTORSN-ChannelEnhancement-ModeLateralMOSFETs RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifier | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifiera | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
TheRFSub-MicronMOSFETLineRFPOWERFIELDEFFECTTRANSISTORSN-ChannelEnhancement-ModeLateralMOSFETs RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifier | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
TheRFSub-MicronMOSFETLineRFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealfor | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifiera | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifiera | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,common-sourceamplifiera | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethem | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPOWERFIELDEFFECTTRANSISTORS TheRFSub–MicronMOSFETLineRFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethem | MotorolaMotorola, Inc 摩托罗拉 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：356.76 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：356.76 Kbytes Page：10 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs 文件：533.36 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs 文件：533.36 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs 文件：533.36 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors 文件：536.35 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFET 文件：488.85 Kbytes Page：12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors 文件：536.35 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
RFPowerFieldEffectTransistors 文件：536.35 Kbytes Page：16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | | | |
INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
MilitaryManaged24X1GCopperPorts1GF/OPort5X10GCopperPorts PRODUCTDESCRIPTION Drivenbyrapidadvancementandlowercosts,Ethernetis becomingthestandardforIP-basedcomponentsinawide rangeofmilitaryandcommercialapplications,including: •Armoredgroundvehicles •Landautonomousvehicles(UGVs) •Robots •Mobileequipmentfieldedinh | ENERCON Enercon Technologies Europe AG |  | | |
SnapRivets 文件：152.09 Kbytes Page：2 Pages | Heyco Heyco |  | | |
SnapRivets 文件：152.09 Kbytes Page：2 Pages | Heyco Heyco | | | |
SnapRivets–continued 文件：98.42 Kbytes Page：1 Pages | Heyco Heyco | | |
MRF9030产品属性
- 类型
描述
- 型号
MRF9030
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
RF POWER FIELD EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FRS |
2020+ |
模块 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Freescale(飞思卡尔) |
23+ |
标准封装 |
9413 |
我们只是原厂的搬运工 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
89630 |
当天发货全新原装现货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
164 |
现货供应 |
||||
FREESCALE |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
MOT |
23+ |
高频管 |
155 |
专营高频管模块,全新原装! |
|||
MOTOROLA/摩托罗拉 |
22+ |
TO-59 |
6000 |
进口原装 假一罚十 现货 |
|||
MOT |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
MOTOROLA |
02+ |
SMD |
6000 |
绝对原装自己现货 |
|||
MOTOROLA/摩托罗拉 |
02+ |
TO-59 |
880000 |
明嘉莱只做原装正品现货 |
MRF9030芯片相关品牌
MRF9030规格书下载地址
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MRF9030数据表相关新闻
MRF8P9300HSR6
MRF8P9300HSR6
2023-12-15MRS25000C2872FCT00
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MRF6V3090NR5射频金属氧化物半导体场效应(RFMOSFET)晶体管
2020-11-24
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