RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applic

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF Power Field Effect Transistors

RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier a

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line
 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：356.76 Kbytes Page：10 Pages

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 68V 945MHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：533.36 Kbytes Page：16 Pages

945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power Field Effect Transistors

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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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RF Power Field Effect Transistors

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RF Power Field Effect Transistors

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INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

Military Managed 24 X 1G Copper Ports 1G F/O Port 5 X 10G Copper Ports

PRODUCT DESCRIPTION Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial applications, including: • Armored ground vehicles • Land autonomous vehicles (UGVs) • Robots • Mobile equipment fielded in h

Snap Rivets

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Snap Rivets

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Snap Rivets – continued

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