MRF18030BLSR3集成电路资料货源供应商报价-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
MRF18030A	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030ALR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030ALSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030BLR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030BLSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030BR3	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930	Motorola 摩托罗拉	Motorola
MRF18030BSR3	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930	Motorola 摩托罗拉	Motorola
MRF1803BR3	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930	Motorola 摩托罗拉	Motorola
MRF1803BSR3	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930	Motorola 摩托罗拉	Motorola
MRF18060A	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB	Motorola 摩托罗拉	Motorola
MRF18060A	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALSR3	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB	Motorola 摩托罗拉	Motorola
MRF18060AR3	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB	Motorola 摩托罗拉	Motorola
MRF18060ASR3	RF POWER FIELD EFFECT TRANSISTORS The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB	Motorola 摩托罗拉	Motorola
MRF18060B	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060B	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency	Motorola 摩托罗拉	Motorola
MRF18060BLR3	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060BLSR3	RF Power Field Effect Transistor Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060BLSR3	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency	Motorola 摩托罗拉	Motorola
MRF18060BR3	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency	Motorola 摩托罗拉	Motorola
MRF18060BSR3	RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency	Motorola 摩托罗拉	Motorola
MRF18085A	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu	Motorola 摩托罗拉	Motorola
MRF18085A	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALR3	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALSR3	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALSR3	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu	Motorola 摩托罗拉	Motorola
MRF18085ALSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu	Motorola 摩托罗拉	Motorola
MRF18085AR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu	Motorola 摩托罗拉	Motorola
MRF18085AR3	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu	Motorola 摩托罗拉	Motorola
MRF18085B	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F	Motorola 摩托罗拉	Motorola
MRF18085B	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085BLSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F	Motorola 摩托罗拉	Motorola
MRF18085BR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F	Motorola 摩托罗拉	Motorola
MRF18090A	RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18090AR3	RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications.	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18030A	RF Power Field Effect Transistors 文件：508.05 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18030AL	1800-1880 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs	ETC 知名厂家	ETC
MRF18030ALR3	RF Power Field Effect Transistors 文件：508.05 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18030ALSR3	RF Power Field Effect Transistors 文件：508.05 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18030ALSR5	封装/外壳：NI-400S 包装：卷带（TR）描述：FET RF 65V 1.88GHZ NI-400S 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
MRF18030BL	1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET	ETC 知名厂家	ETC
MRF18030BR3	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS	ETC 知名厂家	ETC
MRF18060ALR3	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：374.03 Kbytes Page：10 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18060ALR3	封装/外壳：SOT-957A 包装：卷带（TR）描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品晶体管 - FET，MOSFET - 射频	ETC 知名厂家	ETC
MRF18060ALR3_08	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 文件：374.03 Kbytes Page：10 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18090A	1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS 文件：175.03 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18090AS	1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS 文件：175.03 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18090B	RF POWER FIELD EFFECT TRANSISTORS 文件：188.32 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18090BR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：393.19 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18090BS	RF POWER FIELD EFFECT TRANSISTORS 文件：188.32 Kbytes Page：8 Pages	Motorola 摩托罗拉	Motorola
MRF18090BSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件：393.19 Kbytes Page：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
180	1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current	SUNMATE 森美特	SUNMATE
180	SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment	PRODUCTWELL	PRODUCTWELL
180	POWER INDUCTOR ●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc	AITSEMI 创瑞科技	AITSEMI
180	WIRE WOUND SMD INDUCTOR ●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer	AITSEMI 创瑞科技	AITSEMI
180	THREADED INSERT, THRU, REGULAR HEAD STYLE 文件：20.42 Kbytes Page：1 Pages	WITTEN	WITTEN

MRF180产品属性

类型
描述
型号
MRF180
制造商
FREESCALE
制造商全称
Freescale Semiconductor, Inc
功能描述
RF Power Field Effect Transistors

MRF180供应商更多...

更新时间：2025-12-27 17:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	MRF1805ALS	FSL	25+	原装	2789	全新原装自家现货!价格优势!	询价
中天科工半导体（深圳）有限公司	MRF18060A	MOTOROLA/摩托罗拉	20+	原装	67500	原装优势主营型号-可开原型号增税票	询价
贸泽芯城（深圳）电子科技有限公司	MRF18030BLSR3	FREE	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市毅创腾电子科技有限公司	MRF18035	MOTOROLA	23+	TO-63	750	专营高频管模块,全新原装!	询价
深圳市壹芯创科技有限公司	MRF18060A	MOTOROLA	22+	原厂原封	5000	原装现货库存.价格优势	询价
深圳市百诺芯科技有限公司	MRF18030BR3	FREESCALE	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市威雅利发展有限公司	MRF18060A	MOT	00+	SMD	8	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
齐创科技(上海,北京,青岛)有限公司	MRF18060	MOT	23+	模块	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	MRF18060	ON/ONSemiconductor/安森	24+	SMD	6212	新进库存/原装	询价
深圳市宇创芯科技有限公司	MRF18060A	MOTOROLA/摩托罗拉	24+	SOT-502A	9600	原装现货,优势供应,支持实单!	询价

MRF180芯片相关品牌

MRF180规格书下载地址

MRF180参数引脚图相关

MRF180数据表相关新闻

MRF166W原装现货特价出
MRF166W原装现货特价出
2024-12-11
MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF166C
优势渠道
2023-12-20
MRF158
优势渠道
2023-12-20
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

MRF180产品属性

MRF180供应商更多...

MRF180芯片相关品牌

MRF180规格书下载地址

MRF180参数引脚图相关

MRF180数据表相关新闻

MRF166W原装现货特价出

MRF448只有原装，现货，现货，现货！

MRF166C

MRF158

MRF18060A

MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S

DdatasheetPDF页码索引