| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF18085BLSR3 | RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF18085BLSR3 | RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F | MOTOROLA 摩托罗拉 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIROSE/广濑 |
2608+ |
/ |
182881 |
一级代理，原装现货 |
|||
ON |
24+ |
90000 |
|||||
FREESCALE |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
恩XP |
23+ |
NI-650H-4 |
8900 |
全新原装现货 |
|||
FREESCALE |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
恩XP |
25+ |
NI-650H-4 |
12700 |
买原装认准中赛美 |
|||
恩XP |
25+ |
NI-650H-4 |
6000 |
原厂原装 欢迎询价 |
|||
恩XP |
25+ |
NI-650H-4 |
30000 |
原装正品公司现货,假一赔十! |
|||
MICREL/麦瑞 |
2407+ |
SOP |
7750 |
原装现货!实单直说!特价! |
MRF18085BLSR3芯片相关品牌
MRF18085BLSR3规格书下载地址
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