The RF MOSFET Line

RF Power Field Effect TransistorsThe RF MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 – 1990 MHz.

• Typical GSM Performance:

Power Gain – 14 dB (Typ) @ 30 Watts

Efficiency – 50 (Typ) @ 30 Watts

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power

• Excellent Thermal Stability

• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.