位置：首页 > IC中文资料第1682页 > MRF18090A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF18090A | RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF18090A | 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS 文件：175.03 Kbytes Page：8 Pages | Motorola 摩托罗拉 | | |
RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.81GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS 文件：175.03 Kbytes Page：8 Pages | Motorola 摩托罗拉 | | ||
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This | TriQuint | | ||
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This | TriQuint | | ||
90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This | TriQuint | | ||
P/N 48-6645-18 48-Pin 0.5mm QFP-to-48-Pin 0.600 文件：621.11 Kbytes Page：1 Pages | ARIES Aries Electronics,inc | |
MRF18090A产品属性
- 类型
描述
- 型号
MRF18090A
- 功能描述
IC MOSFET RF N-CHAN NI-880
- RoHS
是
- 类别
分离式半导体产品 >> RF FET
- 系列
-
- 产品目录绘图
MOSFET SOT-23-3 Pkg
- 标准包装
3,000
- 系列
-
- 晶体管类型
N 通道 JFET
- 频率
-
- 增益
- 电压 -
- 测试
-
- 额定电流
30mA
- 噪音数据
- 电流 -
- 测试
- 功率 -
- 输出
- 电压 -
- 额定
25V
- 封装/外壳
TO-236-3，SC-59，SOT-23-3
- 供应商设备封装
SOT-23-3（TO-236）
- 包装
带卷(TR)
- 产品目录页面
1558(CN2011-ZH PDF)
- 其它名称
MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
TO-63 |
172 |
全新原装正品现货,支持订货 |
|||
MOTOROLA/摩托罗拉 |
24+ |
32STSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
FREESCALE |
24+ |
TO-63 |
4000 |
原装原厂代理 可免费送样品 |
|||
M/A-COM |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MOTOROLA/摩托罗拉 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
MOTOROLA/摩托罗拉 |
2308+ |
465B-03 |
4852 |
十年专业专注 优势渠道商正品保证公司现货 |
|||
FREESCALE |
25+ |
TO-63 |
880000 |
明嘉莱只做原装正品现货 |
|||
FSL |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
MOT |
23+ |
高频管 |
950 |
专营高频管模块,全新原装! |
|||
MOTOROLA/摩托罗拉 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
MRF18090A规格书下载地址
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