1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930-1990 MHz. • Typical GSM Performanc

30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifi

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

SIntegrated LED Tact Switch

Features/Benefits • Compact Size • THT versions • Different height • Several LED colors • High life cycles

HTSNK, C LONG. .4H LOW FLOW, THRU HOLE

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