RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

RF POWER FIELD EFFECT TRANSISTORS

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs

封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：374.03 Kbytes Page：10 Pages

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：374.03 Kbytes Page：10 Pages

封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.88GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power

60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and single carrier or multi-carrier class AB power