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IRF710价格
参考价格：￥8.4407
型号：IRF710 品牌：Vishay 备注：这里有IRF710多少钱，2025年最近7天走势，今日出价，今日竞价，IRF710批发/采购报价，IRF710行情走势销售排行榜，IRF710报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF710 | 2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation |  |   |
IRF710 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
IRF710 | N-ChannelPowerMOSFETs,2.25A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
IRF710 | IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
IRF710 | N-ChannelMosfetTransistor ·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF710 | N-ChannelPowerMOSFETs,2.25A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
IRF710 | PowerMOSFET 文件：284.58 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRF710 | PowerMOSFETFEATURES 文件：159.88 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRF710 | N-ChannelPowerMOSFETs 文件：360.17 Kbytes Page：5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
HEXFETPowerMOSFET Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters | IRF International Rectifier |  | | |
HEXFETPowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
AdavancedProcessTechnology Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
HEXFET®PowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvanced processingtechniquestoachievethelowestpossibleon-resistancepersilicon area.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevice designthatHEXFETPowerMOSFETsarewellknownfo | IRF International Rectifier | | | |
PowerMOSFET(Vdss=50V,Rds(on)=0.130ohm,Id=3.0A) Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The | IRF International Rectifier | | | |
PowerMOSFET(Vdss=50V) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMO | IRF International Rectifier | | | |
DualN-ChannelMOSFET Features *VDs(v=50V *RDpsON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
adavancedprocesstechnology Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The | IRF International Rectifier | | | |
-30VDualP-ChannelMOSFET Benefits •VDS(V)=-30V •ID=-2.3A •RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
HEXFETPowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | | | |
DualNPChannelMOSFET Features N-Ch: VDS(V)=25V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
EVALUATIONKIT INTRODUCINGLX1710/1711AUDIOMAX ThankyouforyourinterestinthelatestgenerationofAudioMAXproducts.TheenclosedLXE1710evaluationboardisafullyfunctionalmonoamplifierdesignedtodemonstratethe“newandimproved”SwitchingClass-DPowerAmplifierICfromLinfinityMicrosemi.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
HEXFETPowerMOSFET DESCRIPTION TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti | IRF International Rectifier | | | |
DualNPChannelMOSFET Features N-Ch: VDS(V)=25V RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | | | |
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
PowerMOSFET(Vdss=-20V) Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknow | IRF International Rectifier | | | |
N-ChannelPowerMOSFETs,2.25A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
AdvancedPowerMOSFET(400V,3.6ohm,2A) FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
iscN-ChannelMOSFETTransistor •DESCRITION •designedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits. •FEATU | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SurfaceMount DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFETPowerMOSFET HEXFET®PowerMOSFET | IRF International Rectifier | | | |
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HEXFET짰PowerMOSFET 400VN-ChannelMOSFET | IRF International Rectifier | | | |
PowerMOSFET 文件：284.58 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
PowerMOSFETFEATURES 文件：159.88 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：281.46 Kbytes Page：9 Pages | IRF International Rectifier | | | |
DualN-Channel20-V(D-S)MOSFET 文件：1.73329 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
HEXFETPowerMOSFET 文件：263.4 Kbytes Page：9 Pages | IRF International Rectifier | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：308.94 Kbytes Page：9 Pages | IRF International Rectifier | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：308.94 Kbytes Page：9 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：281.42 Kbytes Page：9 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：281.42 Kbytes Page：9 Pages | IRF International Rectifier | | | |
AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET 文件：263.47 Kbytes Page：10 Pages | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET 文件：259.93 Kbytes Page：10 Pages | IRF International Rectifier | | | |
DualN-Channel60V(D-S)175째CMOSFET 文件：1.2215 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：221.12 Kbytes Page：9 Pages | IRF International Rectifier | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：221.12 Kbytes Page：9 Pages | IRF International Rectifier | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：307.9 Kbytes Page：10 Pages | IRF International Rectifier | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：307.9 Kbytes Page：10 Pages | IRF International Rectifier | | | |
Industry-standardpinoutSO-8Package 文件：615.6 Kbytes Page：10 Pages | IRF International Rectifier | | |
IRF710产品属性
- 类型
描述
- 型号
IRF710
- 功能描述
MOSFET N-Chan 400V 2.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
2016+ |
SOP8 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
24+ |
SOP8 |
345 |
原装现货假一赔十 |
|||
IR |
23+ |
SO-8 |
20000 |
全新原装假一赔十 |
|||
IR |
24+ |
SOP8 |
6000 |
全新原装正品现货 假一赔佰 |
|||
Infineon/英飞凌 |
23+ |
SO-8_3.9mm |
12700 |
买原装认准中赛美 |
|||
IR |
21+ |
SOP8 |
9080 |
只做原装,质量保证 |
|||
IR |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
IRF710芯片相关品牌
IRF710规格书下载地址
IRF710参数引脚图相关
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- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRF720S
- IRF720B
- IRF720A
- IRF7207
- IRF7205TRPBF
- IRF7205PBF
- IRF7205
- IRF7204TRPBF-CUTTAPE
- IRF7204TRPBF
- IRF7204PBF
- IRF7204
- IRF7201TRPBF-CUTTAPE
- IRF7201TRPBF
- IRF7201PBF
- IRF7201
- IRF720
- IRF713
- IRF712
- IRF711
- IRF710SPBF
- IRF710S
- IRF710PBF
- IRF710B
- IRF710A
- IRF7107
- IRF7106
- IRF7105TRPBF
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- IRF7105
- IRF7104TRPBF
- IRF7104PBF
- IRF7104
- IRF7103TRPBF-CUTTAPE
- IRF7103TRPBF
- IRF7103PBF
- IRF7103
- IRF7101TRPBF
- IRF7101PBF
- IRF7101
- IRF6N60
- IRF6N40
- IRF6894MTRPBF
- IRF6894MTR1PBF
- IRF6811STRPBF
- IRF6797MTR1PBF
- IRF6795MTRPBF
- IRF6795MTR1PBF
- IRF6794MTR1PBF
- IRF6775MTRPBF
- IRF6729MTRPBF
- IRF6727MTRPBF
- IRF6726MTRPBF
- IRF6725MTRPBF
- IRF6725MTR1PBF
- IRF6721STR1PBF
- IRF6718L2TRPBF
- IRF6717MTRPBF
- IRF6717MTR1PBF
- IRF6715MTRPBF
- IRF6715MTR1PBF
- IRF6712STRPBF
- IRF6691
- IRF6678
- IRF6668
- IRF6665
- IRF6662
- IRF6655
- IRF6648
- IRF6646
- IRF6645
- IRF6644
- IRF6637
- IRF6636
- IRF6635
- IRF6633
- IRF6631
- IRF6626
- IRF6623
- IRF6622
IRF710数据表相关新闻
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