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位置：首页 > IC中文资料第4229页 > IRF710

IRF710价格

参考价格：￥8.4407

型号：IRF710 品牌：Vishay 备注：这里有IRF710多少钱，2024年最近7天走势，今日出价，今日竞价，IRF710批发/采购报价，IRF710行情走势销售排行榜，IRF710报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF710

2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF710

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技

Vishay
IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF710

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF710

N-ChannelMosfetTransistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF710

PowerMOSFET

文件：284.58 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF710

PowerMOSFETFEATURES

文件：159.88 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF710

N-ChannelPowerMOSFETs

文件：360.17 Kbytes Page：5 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF7101

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7101

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7101PBF

HEXFET짰PowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7101TRPBF

AdavancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103

PowerMOSFET(Vdss=50V,Rds(on)=0.130ohm,Id=3.0A)

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103PBF

HEXFETPowerMOSFET

Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103Q

PowerMOSFET(Vdss=50V)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMO

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103TR

DualN-ChannelMOSFET

Features *VDs(v=50V *RDpsON)

UMWUMW

友台友台半导体

UMW
IRF7103TRPBF

adavancedprocesstechnology

Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7104

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7104PBF

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7104TRPBF

AdvancedProcessTechnology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105

EVALUATIONKIT

INTRODUCINGLX1710/1711AUDIOMAX ThankyouforyourinterestinthelatestgenerationofAudioMAXproducts.TheenclosedLXE1710evaluationboardisafullyfunctionalmonoamplifierdesignedtodemonstratethe“newandimproved”SwitchingClass-DPowerAmplifierICfromLinfinityMicrosemi.The

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
IRF7105PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105PBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105QPBF

HEXFETPowerMOSFET

DESCRIPTION TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105TRPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7106

PowerMOSFET(Vdss=-20V)

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7107

HEXFETPowerMOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignforwhichHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF710-713

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF710A

AdvancedPowerMOSFET(400V,3.6ohm,2A)

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF710A

iscN-ChannelMOSFETTransistor

•DESCRITION •designedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits. •FEATU

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF710B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF710PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技

Vishay
IRF710S

SurfaceMount

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

VishayVishay Siliconix

威世科技

Vishay
IRF710S

HEXFETPowerMOSFET

HEXFET®PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF710S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF710S_V01

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay
IRF710SPBF

HEXFET짰PowerMOSFET

400VN-ChannelMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF710_17

PowerMOSFET

文件：284.58 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF710_V01

PowerMOSFETFEATURES

文件：159.88 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRF7101PBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：281.46 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7101TRPBF

DualN-Channel20-V(D-S)MOSFET

文件：1.73329 Mbytes Page：7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7103IPBF

HEXFETPowerMOSFET

文件：263.4 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103PBF

ADVANCEDPROCESSTECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103PBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103PBF-1

Industry-standardpinoutSO-8Package

文件：281.42 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103PBF-1_15

Industry-standardpinoutSO-8Package

文件：281.42 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103QPBF

AUTOMOTIVEMOSFETHEXFET짰PowerMOSFET

文件：263.47 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103QTRPBF

HEXFET짰PowerMOSFET

文件：259.93 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7103TRPBF

DualN-Channel60V(D-S)175째CMOSFET

文件：1.2215 Mbytes Page：9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
IRF7104PBF

ADVANCEDPROCESSTECHNOLOGY

文件：221.12 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7104PBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：221.12 Kbytes Page：9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105PBF

ADVANCEDPROCESSTECHNOLOGY

文件：307.9 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105PBF_15

ADVANCEDPROCESSTECHNOLOGY

文件：307.9 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105PBF-1

Industry-standardpinoutSO-8Package

文件：615.6 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105PBF-1_15

Industry-standardpinoutSO-8Package

文件：615.6 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105Q9BF

HEXFETPOWERMOSFET

文件：316.98 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105QPBF_10

HEXFETPOWERMOSFET

文件：316.98 Kbytes Page：10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF7105QTRPBF

AdvancedProcessTechnology

文件：609.83 Kbytes Page：11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF710产品属性

  • 类型

    描述

  • 型号

    IRF710

  • 功能描述

    MOSFET N-Chan 400V 2.0 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IRF710供应商更多...

更新时间：2024-4-27 8:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
IRF7103QTRPBF
IR
21+
SOP8
1496
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查
询价
深圳市蓝山航业科技有限公司
IRF7104
ir
22+
500000
行业低价,代理渠道
询价
深圳市华康联电子科技有限公司
IRF7105TRPBF
INFINEON
23+
SOP-8
20000
询价
深圳市云美电子科技有限公司
IRF7105TR
IR
22+
SOP-8
9500
原装进口现货假一赔十
询价
深圳市浩宇伟业电子有限公司
IRF7103
IOR
22+
35000
OEM工厂,中国区10年优质供应商!
询价
深圳市高捷芯城科技有限公司
IRF710PBF-BE3
VISHAY(威世)
23+
TO220
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市晨豪科技有限公司
IRF710STRLPBF
INFINEON/英飞凌
23+
TO-263
89630
当天发货全新原装现货
询价
深圳市鑫炜纳电子有限公司
IRF7103TRPBF
IR/INFI
2022+
7600
原厂原装,假一罚十
询价
深圳市东来宝电子科技有限公司
IRF7101TR
IR
22+
SOP-8
60620
1730
询价
深圳好佳好科技有限公司
IRF7104TRPBF
IR
1305+
SOP-8
12000
公司特价原装现货
询价

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