DESCRIPTION

These HEXFET®Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

• Advanced Process Technology

• Ultra Low On-Resistance

• Dual N and P Channel MOSFET

• Surface Mount

• Available in Tape & Reel

• 150°C Operating Temperature

• Lead-Free