丝印代码：IRF7105；Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

25V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

HEXFET Power MOSFET

DESCRIPTION These HEXFET®Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

ADVANCED PROCESS TECHNOLOGY

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ADVANCED PROCESS TECHNOLOGY

文件：307.9 Kbytes Page：10 Pages

Industry-standard pinout SO-8 Package

文件：615.6 Kbytes Page：10 Pages

25V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：615.6 Kbytes Page：10 Pages

HEXFET POWER MOSFET

文件：316.98 Kbytes Page：10 Pages

HEXFET Power MOSFET

HEXFETPOWERMOSFET

文件：316.98 Kbytes Page：10 Pages

Advanced Process Technology

文件：609.83 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：298.99 Kbytes Page：10 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：1.44766 Mbytes Page：14 Pages

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Single chip stereo pre-amplifier/power amplifier circuit

Single Chip Stereo Pre-amplifier/Power Amplifier Circuit

TOP LED DEVICE

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TOP LED DEVICE

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