HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 20V VGS Max. Gate Rating ● 100 tested for Rg Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

20V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ADVANCED PROCESS TECHNOLOGY

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Dual N-Channel 20-V (D-S) MOSFET

文件：1.73329 Mbytes Page：7 Pages

Integrated Circuit AF Power Amplifier, 7W

Description: The NTE7101 is an audio power amplifier in an 8–Lead SIP type package designed for use in car radio and car stereo applications. This device features a low thermal resistance providing easy design for 2Ω load circuits and 4Ω load BTL circuits. Features: • High Output Power:

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

Tiny Low Power Operational Amplifier with Rail-To-Rail Input and Output

文件：853.62 Kbytes Page：18 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages