HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 20V VGS Max. Gate Rating ● 100 tested for Rg Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters

20V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ADVANCED PROCESS TECHNOLOGY

文件：281.46 Kbytes Page：9 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.73329 Mbytes Page：7 Pages

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

FIBRE CHANNEL Dual Transformer

FIBRE CHANNEL Dual Transformer • Designed for use with 75Ω Coaxial or 150Ω STP Cable • Fast rise time and low baseline wander

T- Subminiature Lamps

Miniature Rocker Lever Handle Switches

文件：1.58957 Mbytes Page：22 Pages

7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages