Power MOSFET(Vdss=-20V)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well know

Power MOSFET(Vdss=-20V)

3-1/2 DIGIT A/D CONVERTERS

GENERAL DESCRIPTION The TC7106A and TC7107A 3-1/2 digit direct-display drive analog-to-digital converters allow existing 7106/7107 based systems to be upgraded. Each device has a preci sion reference with a 20ppm/°C max temperature coefficient. This represents a 4 to 7 times improvement over sim

3-1/2 DIGIT A/D CONVERTERS

GENERAL DESCRIPTION The TC7106A and TC7107A 3-1/2 digit direct-display drive analog-to-digital converters allow existing 7106/7107 based systems to be upgraded. Each device has a preci sion reference with a 20ppm/°C max temperature coefficient. This represents a 4 to 7 times improvement over sim

3-1/2 DIGIT A/D CONVERTERS

GENERAL DESCRIPTION The TC7106A and TC7107A 3-1/2 digit direct-display drive analog-to-digital converters allow existing 7106/7107 based systems to be upgraded. Each device has a preci sion reference with a 20ppm/°C max temperature coefficient. This represents a 4 to 7 times improvement over sim

3-1/2 DIGIT A/D CONVERTERS

GENERAL DESCRIPTION The TC7106A and TC7107A 3-1/2 digit direct-display drive analog-to-digital converters allow existing 7106/7107 based systems to be upgraded. Each device has a preci sion reference with a 20ppm/°C max temperature coefficient. This represents a 4 to 7 times improvement over sim

3-1/2 DIGIT A/D CONVERTERS

GENERAL DESCRIPTION The TC7106A and TC7107A 3-1/2 digit direct-display drive analog-to-digital converters allow existing 7106/7107 based systems to be upgraded. Each device has a preci sion reference with a 20ppm/°C max temperature coefficient. This represents a 4 to 7 times improvement over sim