HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well know

HEXFET Power MOSFET

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Miniature Rocker Lever Handle Switches

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