Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

50V 双 N 通道 IR MOSFET ™采用 SO-8 封装

HEXFET Power MOSFET

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MO

Dual N-Channel MOSFET

Features * VDs (v= 50V * RDpsON)

adavanced process technology

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

HEXFET Power MOSFET

文件：263.4 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes Page：9 Pages

50V 单个 N 通道 HEXFET Power MOSFET， 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes Page：9 Pages

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

文件：263.47 Kbytes Page：10 Pages

HEXFET짰 Power MOSFET

文件：259.93 Kbytes Page：10 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.2215 Mbytes Page：9 Pages

FIBRE CHANNEL Dual Transformer

FIBRE CHANNEL Dual Transformer • Designed for use with 75Ω Coaxial or 150Ω STP Cable • Fast rise time and low baseline wander

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Miniature Rocker Lever Handle Switches

文件：1.58957 Mbytes Page：22 Pages

7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages

Dual Transformer

文件：410.28 Kbytes Page：1 Pages