丝印代码：IRF7103；Dual N-Channel MOSFET

Features * VDs (v= 50V * RDpsON)

Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

50V 双 N 通道 IR MOSFET ™采用 SO-8 封装

HEXFET Power MOSFET

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MO

adavanced process technology

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

HEXFET Power MOSFET

文件：263.4 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：308.94 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes Page：9 Pages

50V 单个 N 通道 HEXFET Power MOSFET， 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：281.42 Kbytes Page：9 Pages

Power MOSFET(Vdss=50V)

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

文件：263.47 Kbytes Page：10 Pages

HEXFET짰 Power MOSFET

文件：259.93 Kbytes Page：10 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.2215 Mbytes Page：9 Pages

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N