HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

ADVANCED PROCESS TECHNOLOGY

文件：221.12 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：221.12 Kbytes Page：9 Pages

Integrated Circuit Vertical Deflection Output Circuit w/Drive Circuit for CRT Display

Description: The NTE7039 and NTE7104 are vertical deflection output ICs developed for use in high–grade TVs and displays. The interlace and crossover distortion responses, in particular, have been greatly im proved, allowing excellent picture quality on large size television screens and h

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages