Adavanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

Dual N-Channel 20-V (D-S) MOSFET

文件：1.73329 Mbytes Page：7 Pages

Integrated Circuit AF Power Amplifier, 7W

Description: The NTE7101 is an audio power amplifier in an 8–Lead SIP type package designed for use in car radio and car stereo applications. This device features a low thermal resistance providing easy design for 2Ω load circuits and 4Ω load BTL circuits. Features: • High Output Power:

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

Tiny Low Power Operational Amplifier with Rail-To-Rail Input and Output

文件：853.62 Kbytes Page：18 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages