HEXFET® Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fo

MOSFET 2N-CH 50V 2A 8-SOIC

Integrated Circuit Dual Audio Power Amplifier, 5.5W/Ch (20W BTL)

Description: The NTE7102 is a class B dual audio power amplifier in a 14–Lead DIP type package designed for use in a music center and a radio cassette player. Features: • High Output Power: 20W Typ @ VCC = 18V, RL = 8Ω (BTL) 5.5W/Ch Typ @ VCC = 18V, RL =

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages