HEXFET Power MOSFET

DESCRIPTION These HEXFET®Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti

HEXFETPOWERMOSFET

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Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Miniature Rocker Lever Handle Switches

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toggle switches

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toggle switches

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toggle switches

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