AdvancedPowerMOSFET(400V,3.6ohm,2A)

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):2.815Ω(Typ.)

iscN-ChannelMOSFETTransistor

•DESCRITION •designedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesetypescanbeoperateddirectlyfromintegratedcircuits. •FEATU

WILMAR??ProtectiveRelays-700Series

SeveraltypesofReversePowerRelaysareavailableincludingrelayssensitivetoreversereactivepower(KVAR).WILMARistheleadingbrandofreversepowerrelays.Ourruggedsealedconstructionprovidescontinuousandreliableoperationunaffectedbyshock,vibrationorothersevereenvironmen

DUALINPUTDIGITALTHERMOMETERS

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

DuraTorsionInsertandPowerBits

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WihaQualityToolsSlottedBits

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ElectricalCharacteristics,TotalClearingI2t,ArcVoltage,PowerLosses

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