Advanced Power MOSFET (400V, 3.6ohm, 2A)

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.)

isc N-Channel MOSFET Transistor

• DESCRITION • designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • FEATU

Advanced Power MOSFET (400V, 3.6ohm, 2A)

AUTOMOTIVE GLOW PLUG DRIVER

DESCRIPTION The VN710SP is a monolithic device made using STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transients compatibility table). A

Voltage Comparator

文件：115.54 Kbytes Page：10 Pages

Voltage Comparator

文件：115.54 Kbytes Page：10 Pages

Voltage Comparator

文件：115.54 Kbytes Page：10 Pages

Voltage Comparator

文件：115.54 Kbytes Page：10 Pages