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MRF1价格

参考价格：￥109.1206

型号：MRF1.6/5.6-LR-PC-1(40) 品牌：Hirose Electric Co Ltd 备注：这里有MRF1多少钱，2025年最近7天走势，今日出价，今日竞价，MRF1批发/采购报价，MRF1行情走势销售排行榜，MRF1报价。

型号	功能描述	生产厂家企业	LOGO
MRF1	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF1	TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages	bel	bel
MRF1.25	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF1.6	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF100	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF10005	MICROWAVE POWER TRANSISTOR The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW	Motorola 摩托罗拉	Motorola
MRF10005	The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF P	MACOM	MACOM
MRF10005	Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features • Guaranteed performance @1.215GHz, 28Vdc • Output power: 5.0W CW • Minimum gain = 8.5dB,	MA-COM	MA-COM
MRF1000MB	Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested	MA-COM	MA-COM
MRF1000MB	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF1000MB	MICROWAVE POWER TRANSISTORS NPN SILICON Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Pha	MACOM	MACOM
MRF1001	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30	Microsemi 美高森美	Microsemi
MRF1001A	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30	Microsemi 美高森美	Microsemi
MRF1001A	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.	ASI	ASI
MRF1001A	ELECTRICAL SPECIFICATIONS (Tease - 25째C) ELECTRICAL SPECIFICATIONS (Tease - 25°C)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF1002	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested	Motorola 摩托罗拉	Motorola
MRF1002MA	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested	Motorola 摩托罗拉	Motorola
MRF1002MB	MICROWAVE POWER TRANSISTORS The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested	Motorola 摩托罗拉	Motorola
MRF1002MB	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System	ASI	ASI
MRF10031	MICROWAVE POWER TRANSISTOR Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with	Motorola 摩托罗拉	Motorola
MRF10031	MICROWAVE POWER TRANSISTOR NPN SILICON Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with	MACOM	MACOM
MRF10031	Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi	MA-COM	MA-COM
MRF10031	Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF1004	MICROWAVE POWER TRANSISTORS NPN SILICON Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW	MACOM	MACOM
MRF1004	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF1004MA	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF1004MB	Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB • 100 Tested for load mismatch at all phase angles with 10:1 VSWR •	MA-COM	MA-COM
MRF1004MB	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF1004MB	MICROWAVE POWER TRANSISTORS NPN SILICON Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW	MACOM	MACOM
MRF10070	MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min • 100 Tested for Load Mismatch at All Phase A	Motorola 摩托罗拉	Motorola
MRF10120	MICROWAVE POWER TRANSISTOR The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for	Motorola 摩托罗拉	Motorola
MRF10120	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo	MACOM	MACOM
MRF10120	Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty	MA-COM	MA-COM
MRF10150	MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M	Motorola 摩托罗拉	Motorola
MRF10150	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistor . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) • 100 Tested for Load M	MACOM	MACOM
MRF10150	Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025-1150MHz Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) • 100	MA-COM	MA-COM
MRF1015MA	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f	Motorola 摩托罗拉	Motorola
MRF1015MB	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f	Motorola 摩托罗拉	Motorola
MRF1015MX	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f	Motorola 摩托罗拉	Motorola
MRF1030	UHF POWER TRANSISTOR The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB •	Motorola 摩托罗拉	Motorola
MRF1031	UHF POWER TRANSISTOR The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers • Specified 25 Volt, 900 MHz Characteristics: Output Power — 3.0 Watts Power Gain — 7.5 dB Min, Class AB •	Motorola 摩托罗拉	Motorola
MRF1035	MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch	Motorola 摩托罗拉	Motorola
MRF1035	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa	Motorola 摩托罗拉	Motorola
MRF1035	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch	MACOM	MACOM
MRF10350	MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch	Motorola 摩托罗拉	Motorola
MRF10350	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch	MACOM	MACOM
MRF10350	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF10350	Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Hermeticall	MA-COM	MA-COM
MRF1035MB	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa	Motorola 摩托罗拉	Motorola
MRF1035MB	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System	ASI	ASI
MRF10500	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load M	Motorola 摩托罗拉	Motorola
MRF10501	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load M	Motorola 摩托罗拉	Motorola
MRF10502	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatc	MACOM	MACOM
MRF10502	Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025-1150MHz Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 t	MA-COM	MA-COM
MRF10502	Designed for 1025-1150 MHz pulse common base amplifier Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermeti	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF1090MA	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a	Motorola 摩托罗拉	Motorola
MRF1090MA	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at	MACOM	MACOM
MRF1090MA	Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W peak Minimum gain = 8.4 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Industry standard	MA-COM	MA-COM
MRF1090MB	MICROWAVE POWER TRANSISTORS The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a	Motorola 摩托罗拉	Motorola
MRF1090MB	MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a	MACOM	MACOM

MRF1产品属性

类型
描述
型号
MRF1
制造商
Ferraz Shawmut

MRF1供应商更多...

更新时间：2025-11-23 15:16:00

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深圳市得捷芯城科技有限公司	MRF1570FT1	Freescale(飞思卡尔)	24+	标准封装	11913	我们只是原厂的搬运工	询价
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MRF1价格

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DdatasheetPDF页码索引

MRA4007T3G 快恢复整流二极管丝印R17 1A 1000V MRA4005 贴片