NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W Peak Minimum gain = 8.4 dB • 100 tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

Bipolar

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ·Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB\n·Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration\n·Nitride Passivated\n·Industry Standard Package\n·100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR\n·Interna;

封装/外壳：332A-03 包装：托盘 描述：RF TRANS NPN 70V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Pulse Power Silicon NPN Transistor

文件：185.79 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：185.79 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：541.13 Kbytes Page：6 Pages

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

11-Output Configurable Clock Buffer

TriQuint’s TQ1090 is a configurable clock buffer which generates 11 outputs, operating over a wide range of frequencies from 33 MHz to 45MHz, 65 MHz to 90 MHz and 130 MHz to 180 MHz. The outputs are available at 1x, 2x and 4x, or at 1/2x, 1x and 2x, or at 1/4 x, 1/2 x and 1x the reference clock fr