NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

NPN SILICON RF POWER TRANSISTOR

Inst, 1 Pr #16 Str BC, PVC Ins E1, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description UL Instrumentation, 1 Pair 16AWG (7x24) Bare Copper, PVC Insulation E1 Color Code, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES

1035D Dual Step Drive Full & Half Stepping 1.0 amps, 35 VDC

Features • Accepts 12 – 35 VDC power supply (including ripple) • Adjustable motor current: 0 to 1.0 amps/phase. • Full or half step (jumper selectable), quarter stepping available for OEM • Compact size (1.0 x 2.4 x 3.55 inches) • Mounts on DIN rail • Optically isolated 5 – 24V step and di

35 Watts, 50 Volts Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance

Cost-efficient and complete-an SMT GPS antenna module

文件：142.9 Kbytes Page：2 Pages

10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIERS

文件：133.47 Kbytes Page：2 Pages