MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz

Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (ty

Bipolar

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. ·Guaranteed Performance @ 1.215 GHz, 36 Vdc\n·Silicon Nitride Passivated\n·Hermetically Sealer Industry Standard Package\n·100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR\n·Gain = 7.6 dB min., 8 .5 dB (typ.)\n·Output Power = 120 W Peak\n·Internal Input and Output Matching for Br;

Microwave Long Pulse Power Silicon NPN Transistor

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封装/外壳：355C-02 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 55V 355C-02 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Long Pulse Power Silicon NPN Transistor

文件：171.98 Kbytes Page：5 Pages

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a