The RF Line

Microwave Long Pulse Power Transistor

Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.

• Guaranteed Performance @ 1.215 GHz, 36 Vdc

Output Power = 120 Watts Peak

Gain = 8.0 dB Min., 9.2 dB (Typ)

• 100 Tested for Load Mismatch at All Phase Angles with 3:1 VSWR

• Hermetically Sealed Industry Standard Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

• Internal Input and Output Matching for Broadband Operation

• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.