MICROWAVE POWER TRANSISTOR

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

MICROWAVE POWER TRANSISTOR NPN SILICON

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi

Microwave Long Pulse Power Transistor

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

Microwave Power Silicon NPN Transistor

文件：195.44 Kbytes Page：5 Pages

封装/外壳：332A-03 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 55V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Power Silicon NPN Transistor

文件：195.44 Kbytes Page：5 Pages

Microwave Power Silicon NPN Transistor

文件：642.83 Kbytes Page：6 Pages

Nylon PCB Supports - Imperial Spacing

文件：111.86 Kbytes Page：1 Pages

Optical Components for Optical Measurement

文件：1.85753 Mbytes Page：28 Pages

Programmable Controllers

文件：2.48039 Mbytes Page：24 Pages