MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Hermeticall

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

Microwave Pulse Power Silicon NPN Transistor

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封装/外壳：355E-01 包装：托盘 描述：RF TRANS NPN 65V 355E-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

Bipolar

Microwave Pulse Power Silicon NPN Transistor

文件：188.78 Kbytes Page：6 Pages

Microwave Pulse Power Silicon NPN Transistor

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NPN SILICON RF POWER TRANSISTOR

Inst, 1 Pr #16 Str BC, PVC Ins E1, Blk PVC Jkt, 300V PLTC ITC CMG

Product Description UL Instrumentation, 1 Pair 16AWG (7x24) Bare Copper, PVC Insulation E1 Color Code, Black PVC Outer Jacket, PLTC ITC CMG AWM 2464 SUN RES

1035D Dual Step Drive Full & Half Stepping 1.0 amps, 35 VDC

Features • Accepts 12 – 35 VDC power supply (including ripple) • Adjustable motor current: 0 to 1.0 amps/phase. • Full or half step (jumper selectable), quarter stepping available for OEM • Compact size (1.0 x 2.4 x 3.55 inches) • Mounts on DIN rail • Optically isolated 5 – 24V step and di

35 Watts, 50 Volts Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance

Cost-efficient and complete-an SMT GPS antenna module

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10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIERS

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