MRF1035价格

参考价格:¥1797.8688

型号:MRF10350 品牌:M/A-Com Technology Solut 备注:这里有MRF1035多少钱,2026年最近7天走势,今日出价,今日竞价,MRF1035批发/采购报价,MRF1035行情走势销售排行榜,MRF1035报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MRF1035

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MRF1035

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

MRF1035

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MACOM

MRF1035

MICROWAVE POWER TRANSISTOR

ETC

知名厂家

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System

ASI

Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Hermeticall

MA-COM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MACOM

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System

ASI

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

Microwave Pulse Power Silicon NPN Transistor

文件:188.78 Kbytes Page:6 Pages

MA-COM

封装/外壳:355E-01 包装:托盘 描述:RF TRANS NPN 65V 355E-01 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

Bipolar

MACOM

Microwave Pulse Power Silicon NPN Transistor

文件:188.78 Kbytes Page:6 Pages

MA-COM

Microwave Pulse Power Silicon NPN Transistor

文件:624.71 Kbytes Page:7 Pages

MA-COM

NPN SILICON RF POWER TRANSISTOR

ETC

知名厂家

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

MRF1035产品属性

  • 类型

    描述

  • 型号

    MRF1035

  • 制造商

    MA-COM

  • 制造商全称

    M/A-COM Technology Solutions, Inc.

  • 功能描述

    MICROWAVE POWER TRANSISTOR NPN SILICON

更新时间:2026-3-15 17:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
25+
2
公司优势库存 热卖中!
MACOM
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
FREESCALE
22+
原厂原封
2000
原装现货库存.价格优势
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势
24+
800
M/A-COM
22+
NA
20000
公司只有原装 品质保障
M/A-COM
24+
SMD
3000
M/A-COM专营微波射频全新原装正品
MACOM
23+
NA
25000
##公司100%原装现货 假一罚十!可含税13%免费提供样
M/A-COM
2308+
原装正品
4285
十年专业专注 优势渠道商正品保证
M/A-COM
23+
TO-59
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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