NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System

Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Pha

Bipolar

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. ·Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A\n·Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration\n·Nitride Passivated\n·Industry Standard Package\n·100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR\n·Minimum Gain: 10dB\n·Output Power: 0.2W\n;

封装/外壳：332A-02 包装：托盘 描述：RF TRANS NPN 20V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：609.15 Kbytes Page：5 Pages

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit board) • Wide voltage range: VZ = 2.0 V to 39 V • Easy-to-use because of the fine

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROMACHINED ACCELEROMETER

The XMMA series of silicon capacitive, micromachined accelerometers features; signal conditioning, a 4–pole low pass filter and temperature compensation. Zero–g offset full scale span and filter cut–off are factory set and require no external devices. A full system self–test capability verifies sy