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MRF1001

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

MICROSEMI

美高森美

MRF1001

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MICROCHIP

微芯科技

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

ASI

ELECTRICAL SPECIFICATIONS (Tease - 25째C)

ELECTRICAL SPECIFICATIONS (Tease - 25°C)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

MICROSEMI

美高森美

Trans RF BJT 20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

PANJIT

強茂

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MOTOROLA

摩托罗拉

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

MRF1001产品属性

  • 类型

    描述

  • Maximum Collector Emitter Voltage Range:

    20 to 30V

  • Maximum Collector Emitter Voltage:

    20V

  • Maximum Collector Emitter Saturation Voltage:

    0.1(Typ)@10mA@50mAV

  • Maximum Collector Cut-Off Current:

    50000(Typ)nA

  • Maximum Collector Base Voltage:

    30V

更新时间:2026-8-3 16:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
专业铁帽
CAN3
18500
原装铁帽专营,代理渠道量大可订货
MOTOROLA/摩托罗拉
2019+
SMD
6992
原厂渠道 可含税出货
MOTOROLA
0513+
CAN3
338
全新 发货1-2天
MOT
25+23+
CAN3
24338
绝对原装正品全新进口深圳现货
MOT
24+
CAN3
30980
原装现货/放心购买
MOT
24+
CAN3
1523
MOTOROLA/摩托罗拉
26+
145
现货供应
MOT
22+
CAN3
20000
公司只有原装 品质保障
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
9820+
CAN3
19
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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