NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 350W (peak), 1025-1150MHz

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Hermeticall

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

Bipolar

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. ·Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)\n·Silicon Nitride Passivated\n·Hermetically Sealed Package\n·100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR\n·Characterized Using Mode-S Pulse Format\n·Internal Input and OutputMatch;

封装/外壳：355E-01 包装：托盘 描述：RF TRANS NPN 65V 355E-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Pulse Power Silicon NPN Transistor

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Microwave Pulse Power Silicon NPN Transistor

文件：188.78 Kbytes Page：6 Pages

Microwave Pulse Power Silicon NPN Transistor

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Micastat Dissipative Laminate

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