Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

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MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

The RF Line Microwave Power Transistor

. . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) • RF P

Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V

Description and Applications Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles. Features • Guaranteed performance @1.215GHz, 28Vdc • Output power: 5.0W CW • Minimum gain = 8.5dB,

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. • Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A Output Power = 0.2 Watt Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Pha

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System

Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V

Description and Applications Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Features • Guaranteed performance @ 1090 MHz, 18 Vdc — Class A • Output power: 0.2W • Minimum gain: 10dB • 100 tested

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Ftau = 3.0 Ghz (typ) @ 30

ELECTRICAL SPECIFICATIONS (Tease - 25째C)

ELECTRICAL SPECIFICATIONS (Tease - 25°C)

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System

Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi

MICROWAVE POWER TRANSISTOR

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

MICROWAVE POWER TRANSISTOR NPN SILICON

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

Microwave Long Pulse Power Transistor

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB • 100 Tested for load mismatch at all phase angles with 10:1 VSWR •

MICROWAVE POWER TRANSISTORS NPN SILICON

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSW

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz • Omnigold™ Metalization System

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak Gain = 9.0 dB Min • 100 Tested for Load Mismatch at All Phase A

Microwave Power Silicon Bipolar Transistor

文件：198.78 Kbytes Page：5 Pages

Microwave Power Silicon Bipolar Transistor

文件：198.78 Kbytes Page：5 Pages

Microwave Power Silicon Bipolar Transistor

文件：603.01 Kbytes Page：6 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

封装/外壳：332A-02 包装：托盘 描述：RF TRANS NPN 20V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Bipolar

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：170.22 Kbytes Page：4 Pages

Class A, Class AB Microwave Power Silicon NPN Transistor

文件：609.15 Kbytes Page：5 Pages

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Trans RF BJT 20V

封装/外壳：332A-03 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 55V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Power Silicon NPN Transistor

文件：195.44 Kbytes Page：5 Pages

Microwave Power Silicon NPN Transistor

文件：195.44 Kbytes Page：5 Pages

Microwave Power Silicon NPN Transistor

文件：642.83 Kbytes Page：6 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：170.24 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：170.24 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：576.53 Kbytes Page：6 Pages

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

100/200

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TOGGLE SWITCHES - MINIATURE

文件：1.55809 Mbytes Page：10 Pages